JPH0127590B2 - - Google Patents

Info

Publication number
JPH0127590B2
JPH0127590B2 JP59269661A JP26966184A JPH0127590B2 JP H0127590 B2 JPH0127590 B2 JP H0127590B2 JP 59269661 A JP59269661 A JP 59269661A JP 26966184 A JP26966184 A JP 26966184A JP H0127590 B2 JPH0127590 B2 JP H0127590B2
Authority
JP
Japan
Prior art keywords
region
substrate
source
gate electrode
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59269661A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61148862A (ja
Inventor
Kyomi Naruge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59269661A priority Critical patent/JPS61148862A/ja
Publication of JPS61148862A publication Critical patent/JPS61148862A/ja
Publication of JPH0127590B2 publication Critical patent/JPH0127590B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59269661A 1984-12-22 1984-12-22 半導体装置 Granted JPS61148862A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59269661A JPS61148862A (ja) 1984-12-22 1984-12-22 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59269661A JPS61148862A (ja) 1984-12-22 1984-12-22 半導体装置

Publications (2)

Publication Number Publication Date
JPS61148862A JPS61148862A (ja) 1986-07-07
JPH0127590B2 true JPH0127590B2 (en]) 1989-05-30

Family

ID=17475451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59269661A Granted JPS61148862A (ja) 1984-12-22 1984-12-22 半導体装置

Country Status (1)

Country Link
JP (1) JPS61148862A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08115985A (ja) * 1994-10-17 1996-05-07 Nec Corp 低雑音の半導体集積回路
US6847065B1 (en) * 2003-04-16 2005-01-25 Raytheon Company Radiation-hardened transistor fabricated by modified CMOS process

Also Published As

Publication number Publication date
JPS61148862A (ja) 1986-07-07

Similar Documents

Publication Publication Date Title
JPH1032246A (ja) 半導体装置およびその製造方法
JP2921468B2 (ja) 半導体メモリ装置
JP3206026B2 (ja) 高電圧用ｍｉｓｆｅｔを備える半導体装置
JP2934325B2 (ja) 半導体装置およびその製造方法
GB2313233A (en) CMOS transistor and manufacturing method therefor
EP0151476B1 (en) A read only memory and a method of manufacturing the same
JPS60100469A (ja) 半導体装置
US4564583A (en) Method for manufacturing a semiconductor device
JP4477197B2 (ja) 半導体装置の製造方法
JPH0127590B2 (en])
JPH0714916A (ja) Ｍｏｓ電界効果トランジスタの分離構造およびその製造 方法
JPH10163338A (ja) 半導体装置とその製造方法
JPS62262462A (ja) 半導体装置
JP2557206B2 (ja) 半導体素子の製造方法
JP2993028B2 (ja) 高耐圧ｍｉｓトランジスタ
JPH03169022A (ja) 半導体集積回路装置
JP2973955B2 (ja) 半導体装置の製造方法
JPH06252345A (ja) 半導体集積回路の製造方法
JP2886186B2 (ja) 半導体装置
JP2970376B2 (ja) 相補型半導体装置の製造方法
JPS58124269A (ja) 相補型絶縁ゲート電界効果半導体装置の製造方法
JP2596405B2 (ja) 半導体集積回路装置の製造方法
JPH0113230B2 (en])
JPH0621372A (ja) 相補型ｍｉｓトランジスタ及びその製造方法
JP2993041B2 (ja) 相補型ｍｏｓ半導体装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term